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We report on the generation of single-photon emitters in aluminum nitride films through Zr-ion implantation, which was predicted to form optically addressable spin defects. We studied implantation conditions, post-implantation procedures, and properties of resulting emitters.

 

Temperature-dependent continuous-excitation and time-resolved photoluminescence are studied to probe carrier localization and recombination in nearly strain-balanced m-plane In0.09Ga0.91N/Al0.19Ga0.81N multi-quantum wells grown by plasma-assisted molecular-beam epitaxy. An average localization depth of 21 meV is estimated for the undoped sample. This depth is much smaller than the reported values in polar structures and m-plane InGaN quantum wells. As part of this study, temperature and magnetic field dependence of time-resolved photoluminescence is performed. At 2 K, an initial fast decay time of 0.3 ns is measured for both undoped and doped structures. The undoped sample also exhibits a slow decay component with a time scale of 2.2 ns. The existence of two relaxation paths in the undoped structure can be attributed to different localization centers. The fast relaxation decays are relatively insensitive to external magnetic fields, while the slower relaxation time constant decreases significantly with increasing magnetic fields. The fast decay time scale in the undoped sample is likely due to indium fluctuations in the quantum well. The slow decay time may be related to carrier localization in the barriers. The addition of doping leads to a single fast decay time likely due to stronger exciton localization in the InGaN quantum wells. 

We report on the generation of single-photon emitters in silicon nitride. We demonstrate monolithic integration of these quantum emitters with silicon nitride waveguides showing a room-temperature off-chip count-rate of ~10⁴counts/s and clear antibunching behavior.

 

A high yield (67%) method of creating single photon emitters in annealed silicon nitride on silicon oxide pillars is demonstrated. Furthermore, the SPE emitter placement precision is found to be between ±30nm- ±85nm.

 

Silicon nitride has great potential for integrated quantum photonics. We demonstrate monolithic integration of intrinsic quantum emitters in SiN with waveguides which show a room-temperature off-chip count rate of ~10⁴counts/s and clear antibunching behavior.

 

We demonstrated large scale deterministic creation of single photon emitters in annealed silicon nitride on silicon oxide pillars. The estimated single photon emitter yield is approximately 50% with a lateral accuracy of ±85nm.

 

Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>10 5 counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g (2) (0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform. 

Mid-infrared intersubband transitions in strain-balanced m-plane (In)Al_xGa_1-xN/In_0.16Ga_0.84N (0.19≤x≤0.3) multi-quantum wells are reported for the first time in the range of 3.4–5.1 µm (244–360 meV). Direct and attenuated total-reflection infrared absorption measurements are interpreted using structural information revealed by high-resolution x-ray diffraction and transmission electron microanalysis. The experimental intersubband energies are better reproduced by calculations using the local-density approximation than the Hartree-Fock approximation for the exchange-correlation correction. The effect of charge density, quantum well width, and barrier alloy composition on the intersubband transition energy is also investigated to evaluate the potential of this material for practical device applications.

 

A robust process for fabricating intrinsic single‐photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room‐temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime‐limited linewidths is provided through measurements of inhomogeneous and temperature‐dependent broadening of the zero‐phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero‐phonon lines with instrument‐limited linewidths.